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JEOL launches HAXIS ion-milling SEM for semiconductor failure analysis

Oct 5
1 min read
HAXIS low-angle ion milling SEM. Image: JEOL
HAXIS low-angle ion milling SEM. Image: JEOL

Tokyo, 5 October 2026. JEOL Ltd. has started sales of HAXIS, a scanning electron microscope with low-angle ion milling, designed for semiconductor failure analysis.


As semiconductor structures become smaller and more complex, locating faults by probing circuits with nano-manipulators becomes harder, and probing can affect the sample. HAXIS combines three steps in one system: Low-Angle Ion Milling (LIM), which uses an argon ion beam to remove layers with minimal damage; SEM imaging; and passive voltage contrast (PVC) detection, which locates faults without contact. This allows layer-by-layer analysis of a device.


JEOL lists five main features: clear PVC imaging, cost-effective argon processing, damage-free delayering, layer-by-layer LIM/PVC analysis, and contamination-free sample transfer.


Sales began on 5 October 2026. JEOL's sales target is 15 units per year. The price was not disclosed.


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