NEWSROOM

A junction transistor fabricated on a 6-inch SiC epi-wafer. Kyoto, Japan -- While silicon carbide -- SiC -- has long been promoted as the key to developing electronics suitable for extreme environments, the field has been stuck in the lab for some time. Now, a team of researchers focusing on junction field-effect transistors, or JFETs, have succeeded in developing a new SiC transistor structure that can operate at 600°C, as announced recently by Kyoto University.* One of the

Figure 1. Monolithic 3D-integrated multi-timescale reservoir architecture based on solid ion-gated transistors Thin-film carbon nanotube (CNT) ion-gated transistors were fabricated using an ionogel, in which ions are embedded in a polymer matrix to form a solid. By varying the ionic content, the transistors were designed to show different ionic dynamics and response times. Devices with different time characteristics were then stacked vertically to create a 3D reservoir archi

Autferroic nanomaterials protect everyday data while bringing quantumlike computing to standard microchips Behind every secure online transaction or encrypted message lies a string of completely unpredictable numbers. A team of physicists has now theoretically eliminated a long-standing roadblock, opening the door for next-generation security chips that protect everyday data without slowing down performance. In a study published in “Physical Review Letters,” a research team c

Mark Lundstrom (right), the John A. Edwardson Dean of Purdue University’s College of Engineering, and Rashid Bashir, dean of The Grainger College of Engineering at the University of Illinois Urbana-Champaign, sign a memorandum of understanding establishing a joint semiconductor workforce development initiative during the Semiconductor Degrees Leadership Board meeting at Purdue on Sept. 18. (Purdue University photo/Nicole Finley) Purdue University and the University of Illinoi

The experimental image on the left is a scanning tunnelling microscope image of the research team’s 2D semiconductor device. The distinct elliptical, bright orange regions are electrons in the Wigner solid state while the more elongated structures in the lower right are electrons beginning to “melt” into a Fermi liquid state. The clusters of tiny red circles in the black regions indicate the locations of defects. The theoretical image on the right is a Quantum Monte Carlo sim

A team led by Haitao Wang and Jia Wang at the Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, has come up with a new way of lowering the resistance of p-type GaN contacts.