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NEWSROOM
Infineon expands NVIDIA collaboration on GaN power conversion for 800 VDC AI data centers
Infineon is advancing its collaboration with NVIDIA on 800 VDC power architectures for AI data centers, centered on the high-voltage intermediate bus converter using GaN technology.
2 days ago2 min read
MRDI to lead operation of Hong Kong's first national manufacturing innovation centre
MRDI will lead and operate Hong Kong's first national manufacturing innovation centre, supported by the region's First Five-Year Plan and 2026 Policy Address. The institute is installing two pilot lines for third-generation semiconductor chips at the Yuen Long InnoPark.
4 days ago2 min read
XMax to acquire 1200V vertical GaN developer Hexa Creation
XMax Inc of Commerce, CA, USA has agreed to acquire Hexa Creation Inc, a US-based developer of 1200V vertical GaN power semiconductor technology for AI data-center power infrastructure and other high-voltage applications.
Oct 151 min read
Polar and IC-Link by imec collaborate on 8-inch e-mode GaN manufacturing
Polar Semiconductor and IC-Link by imec are collaborating on 8-inch production of enhancement-mode GaN devices, enabled by a license transfer agreement with imec for its GaN-on-silicon process, device and epitaxy.
Oct 131 min read
Wolfspeed receives conditional $1.5bn loan commitment from US Department of War
Wolfspeed announced a conditional loan commitment letter from the U.S. Department of War for up to $1.5 billion of long-term financing for silicon carbide materials and wide bandgap power devices.
Oct 71 min read
Mivium demonstrates commercially viable production of phase-pure h-GaN nanoparticles
Mivium Inc of Fremont, CA, USA has achieved production of high-purity submicron gallium nitride particles using its proprietary technology platform. Third-party characterization confirms phase-pure hexagonal wurtzite gallium nitride particles with a particle size distribution of 300–500nm.
Oct 71 min read
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