XMax to acquire 1200V vertical GaN developer Hexa Creation
Commerce, 15 October 2026. XMax Inc of Commerce, CA, USA has agreed to acquire Hexa Creation Inc, a US-based company focused on 1200V vertical gallium nitride (GaN) power semiconductor technology for AI data-center power infrastructure and other high-voltage applications.
XMax was formerly Nova LifeStyle Inc. It designs, sources and distributes contemporary furniture but has diversified to also developing and providing artificial intelligence software and platform-based services.
Hexa Creation's technology roadmap centers on a native 1200V vertical GaN trench MOSFET designed for high-voltage and high-power applications beyond the 650V-and-below range where much of today's commercial GaN market is concentrated. The company holds an exclusive license to certain patents and related intellectual property owned by one of the largest public universities in the USA.
Yole Group's report 'From chargers to data centers: power GaN market set for rapid sixfold expansion by 2030' published in October 2025 estimates the global GaN power device market is rising at a compound annual growth rate (CAGR) of about 42% from $355m in 2024 to about $3bn by 2030.
"This acquisition marks XMax's entry into high-voltage power semiconductors, a field closely tied to the growing power demands of AI infrastructure," says XMax's CEO Andy Lu.
Source: Semiconductor Today