Mivium demonstrates commercially viable production of phase-pure h-GaN nanoparticles

Fremont, 7 October 2026. Materials technology company Mivium Inc of Fremont, CA, USA has achieved the production of high-purity submicron gallium nitride (GaN) particles using its proprietary technology platform. The platform extends to additional wide-bandgap and advanced semiconductor materials including gallium oxide and boron nitride.

Independent third-party characterization confirms that Mivium has produced phase-pure hexagonal wurtzite gallium nitride (h-GaN) particles with a particle size distribution of 300–500nm. According to the firm, the development addresses a critical constraint in wide-bandgap semiconductor manufacturing, enabling new device architectures and integration strategies previously considered economically unfeasible.

"Nobody has demonstrated the capability to produce submicron GaN particles at this quality level and scale," claims chief technology officer Chandra Deshpandey PhD, emeritus professor of Materials Science and Engineering at University of California Los Angeles (UCLA).

In July, Mivium closed a $4.23m private-placement financing, bringing total capital raised to more than $10.5m. The funding supports continued R&D, materials characterization, thin-film development, and engagement with potential commercial and strategic partners.

Mivium is also advancing GaN thin-film development derived from its submicron powder platform, with initial deposition work completed in-house. At SEMICON West 2026 in the Moscone Center in San Francisco, CA, USA (13–15 October), Mivium is showing samples and characterization data in booth 5582. Evaluation samples are available to qualified crystal-growth, epitaxy and materials teams.

Source: Semiconductor Today