NEWSROOM

MRDI will lead and operate Hong Kong's first national manufacturing innovation centre, supported by the region's First Five-Year Plan and 2026 Policy Address. The institute is installing two pilot lines for third-generation semiconductor chips at the Yuen Long InnoPark.

Wolfspeed and Infineon expanded and extended their long-term silicon carbide wafer supply agreement. The deal adds 200 mm silicon carbide wafers to the existing 150 mm supply.

onsemi announced that Sungrow has adopted its latest EliteSiC SiC hybrid power module technology for the PowerTitan 3.0 energy storage platform. The architecture improves inverter-level efficiency by 0.4% versus the previous generation.

Researchers at UChicago PME developed a computational framework that models the full optical cycle of spin defects in solids, including internal conversion, the energy-loss pathway that has resisted accurate prediction. Applied to nitrogen-vacancy centers in diamond, it matched spectroscopy data; in silicon carbide divacancies, it revealed internal conversion strongly limits triplet excited-state lifetimes, resolving a long-standing theory-experiment discrepancy.

Researchers at Tohoku University have formed crystalline β-SiC at just 800°C using liquid metal dealloying, a technique previously limited to metals and intermetallics. Immersing a layered Mn5SiC precursor in molten bismuth selectively dissolves manganese, leaving a silicon-carbon framework that reorganizes into nanoporous β-SiC with interconnected nanoscale plates. First-principles calculations confirm the rearrangement is energetically favorable.

Wolfspeed announced a conditional loan commitment letter from the U.S. Department of War for up to $1.5 billion of long-term financing for silicon carbide materials and wide bandgap power devices.