NEWSROOM

KAIST researchers developed etching-flux-mediated single-centered nucleation, using oxygen released from a hafnium oxide barrier to suppress molybdenum disulfide nuclei unevenly, so a single crystal forms at a chosen center in over 99% of 400 patterns. Turning nucleation from a random event into a design parameter enables high-quality 2D semiconductors grown directly where needed, supporting stacked AI chips that cut data-movement delays and power consumption.