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New high-frequency method boosts 2D material readout for next-gen quantum computers
Researchers at Tohoku University and NIMS have overcome a long-standing barrier to fast charge detection in high-resistance 2D-material quantum devices. By integrating a strontium titanate variable capacitor into a high-frequency resonant circuit, the team achieved near-perfect impedance matching, clearly resolving Coulomb oscillations from individual electrons and remaining stable under the perpendicular magnetic fields needed for spin-valley qubits.
4 days ago2 min read
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