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Lab to fab at the wafer-scale for SiC
A junction transistor fabricated on a 6-inch SiC epi-wafer. Kyoto, Japan -- While silicon carbide -- SiC -- has long been promoted as the key to developing electronics suitable for extreme environments, the field has been stuck in the lab for some time. Now, a team of researchers focusing on junction field-effect transistors, or JFETs, have succeeded in developing a new SiC transistor structure that can operate at 600°C, as announced recently by Kyoto University.* One of the


KAIST develops AI chip that recognizes changes in motion over time
Figure 1. Monolithic 3D-integrated multi-timescale reservoir architecture based on solid ion-gated transistors Thin-film carbon nanotube (CNT) ion-gated transistors were fabricated using an ionogel, in which ions are embedded in a polymer matrix to form a solid. By varying the ionic content, the transistors were designed to show different ionic dynamics and response times. Devices with different time characteristics were then stacked vertically to create a 3D reservoir archi


Rice physicists define new material blueprint for next-generation microchip encryption
Autferroic nanomaterials protect everyday data while bringing quantumlike computing to standard microchips Behind every secure online transaction or encrypted message lies a string of completely unpredictable numbers. A team of physicists has now theoretically eliminated a long-standing roadblock, opening the door for next-generation security chips that protect everyday data without slowing down performance. In a study published in “Physical Review Letters,” a research team c


Purdue and University of Illinois, two engineering powerhouses, team up to strengthen semiconductor workforce in U.S.
Mark Lundstrom (right), the John A. Edwardson Dean of Purdue University’s College of Engineering, and Rashid Bashir, dean of The Grainger College of Engineering at the University of Illinois Urbana-Champaign, sign a memorandum of understanding establishing a joint semiconductor workforce development initiative during the Semiconductor Degrees Leadership Board meeting at Purdue on Sept. 18. (Purdue University photo/Nicole Finley) Purdue University and the University of Illinoi


A New Close-Up View of Electrons Inside Semiconductors
The experimental image on the left is a scanning tunnelling microscope image of the research team’s 2D semiconductor device. The distinct elliptical, bright orange regions are electrons in the Wigner solid state while the more elongated structures in the lower right are electrons beginning to “melt” into a Fermi liquid state. The clusters of tiny red circles in the black regions indicate the locations of defects. The theoretical image on the right is a Quantum Monte Carlo sim


New low-resistance contacts pave way for improved gallium nitride semiconductor devices
A team led by Haitao Wang and Jia Wang at the Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, has come up with a new way of lowering the resistance of p-type GaN contacts.


'Electron lighthouse' illuminates new physics
Researchers created an "electron lighthouse" using two lasers to steer electron beams in semiconductors without electricity. This quantum interference breakthrough could transform sensing, telecom & optoelectronics.


Disorder creates new properties in compound semiconductors
An international research team has demonstrated that the intrinsic disorder of the compound semiconductor CuInSnS₄ can be exploited to influence its optical properties. While the atomic vibrations also sense the local disorder, their response is averaged over many different local environments and therefore appear isotropic, as expected for a cubic crystal. In contrast, the optical excitations, known as excitons, are much more sensitive to the local arrangement of atoms. Surpr


Electron accumulation unlocks room-temperature synthesis of Janus 2D semiconductors
Researchers at Tohoku University have uncovered the long-standing mystery behind the synthesis of Janus two-dimensional (2D) semiconductors, paving the way for more precise manufacturing of materials used in future electronics and clean energy technologies.
Janus 2D materials are named after the two-faced Roman god because their top and bottom surfaces are composed of different elements. This asymmetry creates a strong internal electric field, making them attractive for appl


Honey-like Heat Flow: A New Heat Transport Regime Discovered in Ultrathin Semiconductors
Controlling heat flow is a major challenge for next-generation electronics and photonic devices. Now, an international team led by ICN2, UAB, TU/e, and McGill has discovered a completely new heat transport regime in ultrathin 2D semiconductors.


A quieter world for quantum
The latest study on an electron-on-neon qubit, invented at Argonne, shows its strong potential to scale quantum information processing.


The hidden structure behind a widely used class of materials
Relaxor ferroelectrics have been used in electronics and sensors for decades, but the source of their unique properties was a mystery until now.
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